SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES

被引:116
作者
HEEKS, JS
机构
关键词
D O I
10.1109/T-ED.1966.15637
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:68 / +
页数:1
相关论文
共 15 条
[1]  
BARRAUD A, 1963, ACADEMIE SCIENCES, V256, P3632
[2]  
BUTCHER PN, TO BE PUBLISHED
[3]  
CHYNOWETH AG, UNPUBLISHED DATA
[4]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
[5]  
GUNN JB, 1964, 1964 INT C SEM PHYS
[6]  
HEEKS JS, 1965, 1965 IEREIEE S MICR
[7]   TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].
HILSUM, C .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&
[8]   MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].
HUTSON, AR ;
JAYARAMAN, AG ;
CHYNOWETH, AG ;
CORIELL, AS ;
FELDMAN, WL .
PHYSICAL REVIEW LETTERS, 1965, 14 (16) :639-+
[9]  
KING G, UNPUBLISHED DATA
[10]   THEORY OF GUNN EFFECT [J].
KROEMER, H .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1736-&