EL2 AND THE ELECTRONIC-STRUCTURE OF THE ASGA-ASI PAIR IN GAAS - THE ROLE OF LATTICE DISTORTION IN THE PROPERTIES OF THE NORMAL STATE

被引:32
作者
BARAFF, GA
LANNOO, M
SCHLUTER, M
机构
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 09期
关键词
D O I
10.1103/PhysRevB.38.6003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6003 / 6014
页数:12
相关论文
共 28 条
[1]   ASGA ANTISITE DEFECT IN GAAS [J].
BACHELET, GB ;
SCHLUTER, M ;
BARAFF, GA .
PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547
[2]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[3]   ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1987, 35 (12) :6154-6164
[4]   MIGRATION OF INTERSTITIALS IN SILICON [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469
[5]   ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330
[6]   SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959
[7]   NEED FOR AN ACCEPTOR LEVEL IN THE ASGA-ASI MODEL FOR EL2 [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1987, 35 (11) :5929-5932
[8]   ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1984, 30 (04) :1844-1852
[9]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[10]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817