SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF GOLD ON THE GAAS(110) SURFACE

被引:68
|
作者
FEENSTRA, RM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词
D O I
10.1116/1.584582
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:925 / 930
页数:6
相关论文
共 50 条
  • [1] SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY SIMULATION OF THE GAAS(110) SURFACE
    BASS, JM
    MATTHAI, CC
    PHYSICAL REVIEW B, 1995, 52 (07): : 4712 - 4715
  • [2] SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF THIN METAL-FILMS ON THE GAAS(110) SURFACE
    SHIH, CK
    FEENSTRA, RM
    MARTENSSON, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04): : 3379 - 3385
  • [3] SURFACE-MORPHOLOGY OF GAAS(110) BY SCANNING TUNNELING MICROSCOPY
    FEENSTRA, RM
    FEIN, AP
    PHYSICAL REVIEW B, 1985, 32 (02): : 1394 - 1396
  • [4] SCANNING TUNNELING SPECTROSCOPY OF OXYGEN ADSORBATES ON THE GAAS(110) SURFACE
    STROSCIO, JA
    FEENSTRA, RM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1472 - 1478
  • [5] The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
    Dunstan, PR
    Wilks, SP
    Teng, KS
    Pritchard, MA
    Williams, RH
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) : 5636 - 5641
  • [6] The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy
    Dept. of Elec. and Electron. Eng., University of Wales Swansea, Singleton Park, Swansea SA2 8PP, United Kingdom
    J Appl Phys, 10 (5636-5641):
  • [7] STRUCTURE-ANALYSIS OF THE GAAS(110) SURFACE BY SCANNING TUNNELING MICROSCOPY
    TERSOFF, J
    FEENSTRA, RM
    STROSCIO, JA
    FEIN, AP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 497 - 498
  • [8] TRIANGULAR FACETS ON THE GAAS(110) SURFACE OBSERVED BY SCANNING TUNNELING MICROSCOPY
    MOLLER, R
    COENEN, R
    KOSLOWSKI, B
    RAUSCHER, M
    SURFACE SCIENCE, 1989, 217 (1-2) : 289 - 297
  • [9] Scanning tunneling microscopy luminescence from nanoscale surface of GaAs(110)
    Guo, X. L.
    Fujita, D.
    Niori, N.
    Sagisaka, K.
    Onishi, K.
    SURFACE SCIENCE, 2007, 601 (22) : 5280 - 5283
  • [10] Theoretical scanning tunneling microscopy images of the as vacancy on the GaAs(110) surface
    Kim, H
    Chelikowsky, JR
    PHYSICAL REVIEW LETTERS, 1996, 77 (06) : 1063 - 1066