MATERIAL PROPERTIES OF GA0.47IN0.53AS GROWN ON INP BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY

Undoped Ga0.47In0.53As layers were grown by molecular beam epitaxy lattice matched to InP at substrate temperatures, T(s) in the range from 100 to 600-degrees-C. X-ray diffraction indicated a widening of the vertical lattice parameter and a simultaneous increase of the arsenic content at low growth temperature. The epitaxial layers were single-crystalline down to T(s) = 125-degrees-C. The room-temperature residual carrier concentrations and the related mobilities for layers grown below 350-degrees-C are strongly affected by T(s) whereas at 77 K an influence of T(s) on these parameters is already visible at 450-degrees-C. At the very low growth temperatures the epitaxial layers show highly conductive behavior attributed to defect induced ionized deep centers.