THE GROWTH OF NOVEL SILICON MATERIALS

被引：21

作者：

BEAN, JC

机构：

来源：

PHYSICS TODAY | 1986年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.881067

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：36 / 42

页数：7

共 10 条

[1] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J].

BEAN, JC .

SCIENCE, 1985, 230 (4722) :127-131

[2]

BEAN JC, 1985, 1ST P INT S SIL MOL

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[4] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI [J].

HAUENSTEIN, RJ ;

SCHLESINGER, TE ;

MCGILL, TC ;

HUNT, BD ;

SCHOWALTER, LJ .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :853-855

[5] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J].

HENSEL, JC ;

LEVI, AFJ ;

TUNG, RT ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :151-153

[6]

KASPER E, SILICON MOL BEAM EPI

[7] TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES [J].

ROSENCHER, E ;

DELAGE, S ;

CAMPIDELLI, Y ;

DAVITAYA, FA .

ELECTRONICS LETTERS, 1984, 20 (19) :762-764

[8]

TEMKIN H, APPL PHYS LETT

[9] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES [J].

TUNG, RT .

PHYSICAL REVIEW LETTERS, 1984, 52 (06) :461-464

[10]

TUNG RT, J VAC SCI TECHNOL

← 1 →