EXCESS CURRENT IN N+GAAS-ALXGA1-XAS-NGAAS HETEROJUNCTIONS

被引：2

作者：

LU, SS ^{[1
]}

LEE, KR ^{[1
]}

LEE, KH ^{[1
]}

NATHAN, MI ^{[1
]}

HEIBLUM, M ^{[1
]}

WRIGHT, SL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(90)90344-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Current versus longitudinal stress characteristics with 〈100〉 stress direction for four n + GaAsAlx Ga1-xAsnGaAs heterojunc grown on (100) substrates are measured and compared with theory. Our samples have the AlGaAs barriers with aluminum concentrations x=0.30, 0.32, 0.50 and 0.80 and the thickness range from 300-400 Å. The agreement between theory and experiment is good, if we assume an X-valley shear deformation potential of 9.6 eV. However, x=0.32 and 0.50 samples need about 5 kbar of stress offset to match our experimental results with theory, which may be due to the excess current through impurities whose energy level is coupled to the X-valleys. © 1990.

引用

页码：430 / 432

页数：3

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