CHARACTERISTICS OF DC MAGNETRON, REACTIVELY SPUTTERED TINX FILMS FOR DIFFUSION-BARRIERS IN III-V SEMICONDUCTOR METALLIZATION

被引：74

作者：

NOEL, JP ^{[1
]}

HOUGHTON, DC ^{[1
]}

ESTE, G ^{[1
]}

SHEPHERD, FR ^{[1
]}

PLATTNER, H ^{[1
]}

机构：

[1] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,CHALK RIVER K0J 1J0,ONTARIO,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572582

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：284 / 287

页数：4

共 13 条

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[7] HIGH-RATE DEPOSITION OF TRANSPARENT CONDUCTING FILMS BY MODIFIED REACTIVE PLANAR MAGNETRON SPUTTERING OF CD2SN ALLOY [J].

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[8] SURFACE OXIDATION-KINETICS OF SPUTTERING TARGETS [J].

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[9]

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[10] DIFFUSION BARRIERS IN THIN-FILMS [J].

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