STRUCTURAL CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY OF SILICON GROWN OVER SUBMICROMETER-PERIOD GRATINGS OF DEPOSITED TUNGSTEN

被引：7
作者：
VOJAK, BA
RATHMAN, DD
BURNS, JA
CABRAL, SM
EFREMOW, NN
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 02期
关键词：
D O I：
10.1063/1.94717
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：223 / 225
页数：3
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