HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS

被引：53

作者：

MATSUSHIMA, Y

AKIBA, S

SAKAI, K

KUSHIRO, Y

NODA, Y

UTAKA, K

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 22期

关键词：

D O I：

10.1049/el:19820649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：945 / 946

页数：2

共 8 条

[1]

AKIBA S, 1979, NATL CONV REC IECE J, P859

[2] EXCESS-NOISE AND RECEIVER SENSITIVITY MEASUREMENTS OF IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

WILLIAMS, GF ;

KIM, OK ;

SMITH, RG .

ELECTRONICS LETTERS, 1981, 17 (24) :917-919

[3] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98

[4] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].

KIM, OK ;

FORREST, SR ;

BONNER, WA ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :402-404

[5]

Matsushima Y., 1980, Sixth European Conference on Optical Communication, P226

[6]

MATSUSHIMA Y, 1981, IEEE ELECTRON DEVICE, V2, P179

[7] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].

SUSA, N ;

NAKAGOME, H ;

MIKAMI, O ;

ANDO, H ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) :864-870

[8]

Yeats R., 1981, IEEE Electron Device Letters, VEDL-2, P268, DOI 10.1109/EDL.1981.25428

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