CHARACTERIZATION OF INTERFACIAL STRUCTURE OF INGAAS/INP SHORT-PERIOD SUPERLATTICES BY HIGH-RESOLUTION X-RAY-DIFFRACTION AND RAMAN-SCATTERING

被引：7
作者：
MOZUME, T
机构：
[1] Central Research Laboratory, Hitachi, Ltd.
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期
关键词：
D O I：
10.1063/1.358899
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaAs/InP short-period superlattices (SPSLs) grown by gas source molecular beam epitaxy (GSMBE) and by gas source migration enhanced epitaxy (GSMEE) on (001)InP substrates were investigated by x-ray diffraction (XRD) and Raman scattering. XRD and Raman scattering results show that, although the average lattice mismatch relative to the InP substrate in GSMBE-grown SPSL is close to zero, there may be some lattice parameter relaxation and substrate-layer tilting caused by asymmetrical ordering of atomic layers and/or interchange between As and P atoms at interfaces. In GSMEE-grown SPSLs, layer-by-layer growth is achieved and strained interface layers are formed. © 1995 American Institute of Physics.
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页码：1492 / 1497
页数：6
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