FORMATION MECHANISM OF P-TYPE SURFACE CONDUCTIVE LAYER ON DEPOSITED DIAMOND FILMS

被引：143
作者：
GI, RS
MIZUMASA, T
AKIBA, Y
HIROSE, Y
KUROSU, T
IIDA, M
机构：
[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa, 259-12
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 10期
关键词：
DIAMOND FILM; HOT-FILAMENT CVD; P-TYPE SURFACE CONDUCTIVE LAYER; HYDROGEN-TERMINATED SURFACE; ACID VAPOR SENSOR;
D O I：
10.1143/JJAP.34.5550
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A model of the formation of a p-type surface conductive layer on deposited diamond films is proposed. According to the model, the ionization of acid in water produces oxonium ion (H3O+) which reacts with hydrogen on diamond films and causes the creation of holes in diamond films. The model also explains the disappearance of the p-type surface conductive layer by the action of alkaline substances. The experimental results concerning the change in electrical resistance at the surface of diamond films can be explained using the proposed model.
引用
收藏
页码：5550 / 5555
页数：6
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