PROPERTIES OF TRANSPARENT CONDUCTING OXIDES DEPOSITED AT ROOM-TEMPERATURE

被引：58

作者：

DAVIS, L

机构：

来源：

THIN SOLID FILMS | 1993年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90632-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A range of indium tin oxide (ITO) films were deposited on glass substrates at room temperature using reactive de sputtering. The coatings were deposited in an Ar/O-2 plasma, and their appearance immediately after deposition ranged from mirror-like to brown to clear. The chemical and physical properties of each of these films were benchmarked with a battery of analytical tools including XPS, Auger, XRD, resistance and thickness measurements. The impact of annealing on the films was also studied. Annealing the films tends to convert all coatings to transparent conductive layers due to oxidation reactions. Film resistance was also found to decrease with annealing. The chemical phenomena responsible for these characteristics are discussed.

引用

页码：1 / 5

页数：5

共 7 条

[1]

[Anonymous], 2007, INTRO SOLID STATE PH

[2]

COUTTS TJ, TRANSPARENT CONDUCTI

[3] ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].