RESONANT PEAKS IN THE TRANSMISSION COEFFICIENT OF COMPOSITIONALLY NONABRUPT GAAS/ALXGA1-X AS HETEROJUNCTIONS

被引：24

作者：

FREIRE, VN

AUTO, MM

FARIAS, GA

机构：

[1] Caixa Postal 6030 - Departamento de Física, UFC 60450 - Fortaleza, Ceará

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 11卷 / 01期

关键词：

D O I：

10.1016/0749-6036(92)90355-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transmission coefficient of compositionally nonabrupt GaAs/AlxGa1-xAs heterojunctions is calculated. A linear aluminium molar fraction variation in the interface width l is assumed. Numerical results are obtained for electrons and holes, corresponding to observed transmission resonant peaks for l as short as two GaAs lattice parameters. © 1992.

引用

页码：17 / 22

页数：6

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