QUANTUM EFFECTS OF ELECTRONS AND HOLES IN THE MOSFET INVERSION LAYER

被引：3

作者：

LIN, MS

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 11期

关键词：

D O I：

10.1109/EDL.1984.25998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：487 / 490

页数：4

共 11 条

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[8] SEMI-EMPIRICAL EQUATIONS FOR ELECTRON VELOCITY IN SILICON .2. MOS INVERSION LAYER [J].

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[9] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

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[10] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

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