ELECTRICAL-CONDUCTIVITY AND STRUCTURE DEFECTS OF N-TYPE SEMICONDUCTOR OXIDES .1. GENERAL RELATIONSHIP BETWEEN ELECTRICAL-CONDUCTIVITY AND OXYGEN-PRESSURE FOR DIFFERENT DEFECT SPECIES

被引：0
作者：
HERRMANN, JM [1 ]
机构：
[1] INST RECH CATALYSE,F-69626 VILLEURBANNE,FRANCE
来源：
JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE | 1976年 / 73卷 / 05期
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中图分类号：
Q5 [生物化学]; Q7 [分子生物学];
学科分类号：
071010 ; 081704 ;
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页码：475 / 478
页数：4
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