EFFECT OF FERROELECTRIC POLARIZATION OF INSULATED-GATE THIN-FILM TRANSISTOR PARAMETERS

被引：43
|
作者：
ZULEEG, R
WIEDER, HH
机构：
来源：
SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 06期
关键词：
D O I：
10.1016/0038-1101(66)90010-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：657 / &
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