STEADY-STATE TRANSPORT IN TRAP-DOMINATED RELAXATION SEMICONDUCTORS

被引：18

作者：

SCHETZINA, JF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27607

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.11.4994

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4994 / 4998

页数：5

共 16 条

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[7] TRANSPORT AND LOCALIZED LEVELS IN AMORPHOUS BINARY CHALCOGENIDES [J].

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APPLIED PHYSICS LETTERS, 1974, 25 (07) :419-421

[8] ELECTRICAL PINCH IN ELASTICALLY DEFORMED GERMANIUM [J].

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[9]

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[10]

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