CRITICAL LAYER THICKNESS ON (111)B-ORIENTED INGAAS/GAAS HETEROEPITAXY

被引：87

作者：

ANAN, T

NISHI, K

SUGOU, S

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期

关键词：

D O I：

10.1063/1.106728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The critical layer thickness of lattice-mismatched InGaAs on (111)B-oriented GaAs was investigated by monitoring surface lattice relaxation using streak spacing on the reflection high-energy electron diffraction pattern. The critical layer thickness (h(c)) grown on (111)B was about twice that of a (100) under the same growth conditions. A qualitative explanation for the enhancement of h(c) is given based on the mechanical equilibrium theory developed by J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)] for a strained single heterostructure.

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页码：3159 / 3161

页数：3

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