A COMPARATIVE-STUDY OF COMMERCIAL INDIUM-PHOSPHIDE SUBSTRATES

被引：6

作者：

QUINLAN, KP

机构：

[1] Rome Air Development Center, Solid State Sciences Directorate, Massachusetts 01731, Hanscom Air Force Base

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 06期

关键词：

D O I：

10.1149/1.2086847

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：1991 / 1995

页数：5

共 16 条

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[2] ETCH FEATURES IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE
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[J]. JOURNAL OF MATERIALS SCIENCE, 1980, 15 (10) : 2539 - 2549
[3] BROWN GT, 1981, I PHYSICS C SERIES, V60, P351
[4] EFFECTS OF SUBSTRATE POLISHING ON DOUBLE-HETEROSTRUCTURE ALYGA1-YAS-ALXGA1-XAS LASERS GROWN BY MOLECULAR-BEAM EXPITAXY
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[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 111 - 124
[6] BROMINE METHANOL POLISHING OF (100) INP SUBSTRATES
CHIN, BH
BARLOW, KL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) : 3120 - 3125
[7] NEW DISLOCATION ETCHANT FOR INP
CHU, SNG
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 352 - 354
[8] THE EFFECT OF A CONTINUOUS ETCH ON THE GROWTH-RATE AND MORPHOLOGY OF INP PREPARED BY THE VAPOR-PHASE EPITAXIAL-HYDRIDE METHOD
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[9] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
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[10] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04): : 593 - 637

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