AN ANOMALOUS BEHAVIOR IN LOW-FREQUENCY GAAS RESISTOR NOISE

被引：19

作者：

HELLUMS, JR

RUCKER, LM

机构：

[1] Univ of Texas at Arlington, Dep of, Electrical Engineering, Arlington,, TX, USA, Univ of Texas at Arlington, Dep of Electrical Engineering, Arlington, TX, USA

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 06期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTOR DEVICES;

D O I：

10.1016/0038-1101(85)90123-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents low-frequency noise found in an implanted GaAs resistor. An anomalous slope was found to be relatively constant over a two decade frequency span. This indicates the presence of a noise source for which there is no known model.

引用

页码：549 / 550

页数：2