THE SILICON IMPURITY AS A POSSIBLE GROWTH-REGIME INDICATOR FOR LINBO3 CRYSTALS

被引：4
作者：
ERDEI, S
SZALLER, Z
RAKSANYI, K
MATOK, G
机构：
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1985年 / 20卷 / 08期
关键词：
D O I：
10.1002/crat.2170200808
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：1047 / 1054
页数：8
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