OPTICAL-ABSORPTION STUDIES OF SI IMPLANTED SIO2

被引：3

作者：

KALNITSKY, A ^{[1
]}

ELLUL, JP ^{[1
]}

BOOTHROYD, AR ^{[1
]}

ABBOTT, RS ^{[1
]}

机构：

[1] CARLETON UNIV, DEPT ELECTR, OTTAWA K1S 5B6, ONTARIO, CANADA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 02期

关键词：

Optically active defects in SiO[!sub]2[!/sub; oxidation of excess Si in Si-rich SiO[!sub]2[!/sub; Si ion implantation; Si-rich SiO[!sub]2[!/sub;

D O I：

10.1007/BF02651737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical absorption of Si implanted SiO2 is characterized as a function of implant dose and energy upon annealing in N2, H2 and O2 ambients. Interpretation of optical data yields information regarding the structure of defects due to excess Si. These defects are responsible for the memory effect and enhanced conductivity previously reported for Si implanted SiO2. A correlation between E-band absorption (Si-Si 'wrong' bond defect) intensity and the amount of excess Si was established. Annealing of this band in O2 is diffusion-limited with a reaction cross-section of 5.10-15 cm2. Compressive strain-induced, oxygen diffusivity-retardation was observed. The C-band absorption (relaxed oxygen vacancy defect) observed in this study is unique in its response to heat treatment in N2 and H2 since it does not anneal in these ambients. C-band annealing kinetics in O2 closely parallel those of E-band. B2-band absorption (unrelaxed oxygen vacancy defect) produced by Si implantation is very similar in its annealing properties to the published data. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：131 / 138

页数：8

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