PRESSURE AND IRRADIATION ANGLE DEPENDENCE OF MASKLESS ION-BEAM ASSISTED ETCHING OF GAAS AND SI

被引：38

作者：

OCHIAI, Y

GAMO, K

NAMBA, S

机构：

[1] Osaka Univ, Faculty of Engineering, Science, Toyonaka, Jpn, Osaka Univ, Faculty of Engineering Science, Toyonaka, Jpn

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

GALLIUM AND ALLOYS - ION BEAMS - Applications - SEMICONDUCTING SILICON - Etching;

D O I：

10.1116/1.583293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Maskless ion beam assisted etching of GaAs and Si has been investigated. Focused Ga** plus ion beam was used to irradiate GaAs and Si in chlorine and xenon difluoride gas atmosphere, respectively. It was found that an optimum gas pressure existed to improve the etching rate. The etching rate showed a maximum at a bombarding angle of 60 degree -70 degree . The simulation of the etching profile was in reasonable agreement with the observed profiles. It was also found that redeposition effect is absent for ion beam assisted etching.

引用

页码：67 / 70

页数：4

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