PERSISTENT PHOTOCONDUCTIVITY IN DONOR-DOPED CD-1-XZN-XTE

被引：80

作者：

BURKEY, BC ^{[1
]}

KHOSLA, RP ^{[1
]}

FISCHER, JR ^{[1
]}

LOSEE, DL ^{[1
]}

机构：

[1] EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.322732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1095 / 1102

页数：8

共 12 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P123

[2] SELF-COMPENSATION IN CDTE [J].

CANALI, C ;

OTTAVIANI, G ;

BELL, RO ;

WALD, FV .

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[3] NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE [J].

ISELER, GW ;

KAFALAS, JA ;

STRAUSS, AJ ;

BUBE, RH ;

MACMILLAN, HF .

SOLID STATE COMMUNICATIONS, 1972, 10 (07) :619-+

[4]

ISELER GW, 1972, B AM PHYS SOC, V17, P304

[5] PERSISTENT PHOTOCONDUCTIVITY IN CD1-XZNXTE-CL [J].

KHOSLA, RP ;

BURKEY, BC ;

FISCHER, JR ;

LOSEE, DL .

SOLID STATE COMMUNICATIONS, 1974, 15 (11-1) :1809-1812

[6] SOME PROPERTIES OF DOUBLE ACCEPTOR CENTER IN CDTE [J].

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WOODBURY, HH ;

SEGALL, B .

PHYSICAL REVIEW, 1964, 134 (3A) :A751-+

[7]

LOSEE DL, UNPUBLISHED

[8]

MACMILLAN HF, 1972, THESIS STANFORD U

[9] OSCILLATORY PHOTOCONDUCTIVITY AND ENERGY-BAND PARAMETERS OF ZNTE [J].

NAHORY, RE ;

FAN, HY .

PHYSICAL REVIEW LETTERS, 1966, 17 (05) :251-+

[10] Electron mobility in II-VI semiconductors [J].

Rode, D. L. .

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