THEORETICAL AND EXPERIMENTAL-STUDY OF HETEROJUNCTION FETS

被引：4

作者：

CAPPY, A

VANOVERSCHELDE, A

ZIMMERMANN, J

PHILIPPE, P

VERSNAEYEN, C

SALMER, G

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1983年 / 18卷 / 11期

关键词：

D O I：

10.1051/rphysap:019830018011071900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：719 / 726

页数：8

共 11 条

[1]

CAPPY A, 1981, THESIS LILLE

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ETIENNE, P ;

LAVIRON, M ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1980, 16 (17) :667-668

[3]

DELAGEBEAUDEUF D, 1982, IEEE T ELEC DEVICES, V29, P950

[4]

DELECLUSE P, 1983, JUI JOURN NAT SEM CO

[5] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS) [J].

DRUMMOND, TJ ;

KOPP, W ;

MORKOC, H ;

KEEVER, M .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :277-279

[6] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

DRUMMOND, TJ ;

KOPP, W ;

THORNE, RE ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :879-881

[7] ANALYSIS FOR OPTIMUM THRESHOLD VOLTAGE AND LOAD CURRENT OF E-D-TYPE GAAS DCFL CIRCUITS [J].

INO, M ;

HIRAYAMA, M ;

OHMORI, M .

ELECTRONICS LETTERS, 1981, 17 (15) :522-523

[8]

LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

[9] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

JOSHIN, K ;

HIKOSAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L317-L319

[10] SUB-FJ INVERTER ANALYSIS FOR GAAS VLSI [J].

TOGASHI, M ;

INO, M ;

HIRAYAMA, M .

ELECTRONICS LETTERS, 1983, 19 (06) :231-232

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