SILICON EPITAXY FOR CMOS DEVICES

被引：0

作者：

SWAROOP, RB

机构：

来源：

SOLID STATE TECHNOLOGY | 1986年 / 29卷 / 08期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：151 / 152

页数：2

共 9 条

[1]

BORLAND JO, 1984, SOLID STATE TECHNOL, V27, P123

[2]

BORLAND JO, 1985, VLSI SCI TECHNOLOGY, P77

[3]

Dyson W., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P107

[4]

DYSON W, 1983, ELECTROCHEMICAL SOC, P246

[5]

SWAROOP RB, 1983, ELECTROCHEM SOC, P180

[6]

SWAROOP RB, 1986, ASTM STP, V960

[7]

SWAROOP RB, 1984, ASTM STP, V850, P230

[8] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

TAN, TY ;

GARDNER, EE ;

TICE, WK .

APPLIED PHYSICS LETTERS, 1977, 30 (04) :175-176

[9]

Yaney D. S., 1981, International Electron Devices Meeting, P236

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