RECOMBINATION IN GAMMA-IRRADIATED SILICON

被引:14
作者
GLAENZER, RH
WOLF, CJ
机构
关键词
D O I
10.1063/1.1714449
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2197 / &
相关论文
共 19 条
[1]   RECOMBINATION AND TRAPPING IN NORMAL AND ELECTRON-IRRADIATED SILICON [J].
BAICKER, JA .
PHYSICAL REVIEW, 1963, 129 (03) :1174-&
[2]   A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J].
BEMSKI, G ;
WRIGHT, K ;
SZYMANSKI, B .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) :1-&
[3]  
CURTIS OL, 1959, J APPL PHYS, V30, P1174, DOI 10.1063/1.1735288
[4]  
GALKIN GN, 1961, SOV PHYS-SOL STATE, V2, P1819
[5]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[6]  
INUISHI Y, 1963, J PHYS SOC JAPAN S3, V18, P240
[7]   TRAPPING AND RECOMBINATION CENTERS IN PLASTICALLY BENT SILICON [J].
MATSUURA, K ;
INUISHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (05) :874-&
[8]  
SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246
[9]   CARRIER LIFETIME IN SEMICONDUCTORS FOR TRANSIENT CONDITIONS [J].
SANDIFORD, DJ .
PHYSICAL REVIEW, 1957, 105 (02) :524-524
[10]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842