Nanoelectronics. Spin transport in the NEGF method and quantum spin Hall effect by "bottom-up" approach

被引：0
|
作者：
Kruglyak, Yu. A. [1 ]
Kondratenko, P. A. [2 ]
Lopatkin, Yu. M. [3 ]
机构：
[1] Odessa State Environm Univ, 15 Lvivska St, UA-65016 Odessa, Ukraine
[2] Natl Aviat Univ, 1 Komarov Ave, UA-03058 Kiev, Ukraine
[3] Sumy State Univ, 2 Rimskiy Korsakov St, UA-40007 Sumy, Ukraine
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2015年 / 7卷 / 04期
关键词：
Nanophysics; Nanoelectronics; Molecular electronics; Bottom-up; Spin transport; Spin valve; Spin precession; Spin Hamiltonians; Zeeman splitting; Rashba effect; Spinors; Quantum spin Hall effect; QSHE; NEGF;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Spin transport with the NEGF method in the spinor representation, in particular, spin valve, rotating magnetic contacts, spin precession and rotating spins, Zeeman and Rashba spin Hamiltonians, quantum spin Hall effect, calculation the spin potential, and four-component description of transport are discussed in the frame of the "bottom-up" approach of modern nanoelectronics.
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页数：12
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