Nanoelectronics. Spin transport in the NEGF method and quantum spin Hall effect by "bottom-up" approach

被引：0
|
作者：
Kruglyak, Yu. A. [1 ]
Kondratenko, P. A. [2 ]
Lopatkin, Yu. M. [3 ]
机构：
[1] Odessa State Environm Univ, 15 Lvivska St, UA-65016 Odessa, Ukraine
[2] Natl Aviat Univ, 1 Komarov Ave, UA-03058 Kiev, Ukraine
[3] Sumy State Univ, 2 Rimskiy Korsakov St, UA-40007 Sumy, Ukraine
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2015年 / 7卷 / 04期
关键词：
Nanophysics; Nanoelectronics; Molecular electronics; Bottom-up; Spin transport; Spin valve; Spin precession; Spin Hamiltonians; Zeeman splitting; Rashba effect; Spinors; Quantum spin Hall effect; QSHE; NEGF;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Spin transport with the NEGF method in the spinor representation, in particular, spin valve, rotating magnetic contacts, spin precession and rotating spins, Zeeman and Rashba spin Hamiltonians, quantum spin Hall effect, calculation the spin potential, and four-component description of transport are discussed in the frame of the "bottom-up" approach of modern nanoelectronics.
引用
收藏
页数：12
相关论文
共 50 条
  • [1] Nanoelectronics: the Hall Effect and Measurement of Electrochemical Potentials by "Bottom-Up" Approach
    Kruglyak, Yu. A.
    Kondratenko, P. A.
    Lopatkin, Yu. M.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2015, 7 (02)
  • [2] Bottom-up approach to silicon nanoelectronics
    Mizuta, Hiroshi
    Oda, Shunri
    MICROELECTRONICS JOURNAL, 2008, 39 (02) : 171 - 176
  • [3] Nanoelectronics: Thermoelectric Phenomena in "Bottom-Up" Approach
    Kruglyak, Yu. A.
    Kondratenko, P. A.
    Lopatkin, Yu. M.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2014, 6 (01)
  • [4] A New Approach to Transport Coefficients in the Quantum Spin Hall Effect
    Giovanna Marcelli
    Gianluca Panati
    Stefan Teufel
    Annales Henri Poincaré, 2021, 22 : 1069 - 1111
  • [5] A New Approach to Transport Coefficients in the Quantum Spin Hall Effect
    Marcelli, Giovanna
    Panati, Gianluca
    Teufel, Stefan
    ANNALES HENRI POINCARE, 2021, 22 (04): : 1069 - 1111
  • [6] Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane
    Zhang, L. Z.
    Zhai, F.
    Jin, Kyung-Hwan
    Cui, B.
    Huang, Bing
    Wang, Zhiming
    Lu, J. Q.
    Liu, Feng
    NANO LETTERS, 2017, 17 (07) : 4359 - 4364
  • [7] Silicon nanoelectronics: Precise fabrication via a bottom-up approach
    Seung H. Kang
    JOM, 2004, 56 : 19 - 19
  • [8] Silicon nanoelectronics: Precise fabrication via a bottom-up approach
    Kang, SH
    JOM, 2004, 56 (10) : 19 - 19
  • [9] Bottom-up approach for the fabrication of spin torque nano-oscillators
    Darques, M.
    Dussaux, A.
    Khvalkovskiy, A. V.
    Medina, J. De la Torre
    Araujo, F. Abreu
    Guillemet, R.
    Bouzehouane, K.
    Fusil, S.
    Grollier, J.
    Avanesyan, G. G.
    Zvezdin, K. A.
    Cros, V.
    Piraux, L.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (10)
  • [10] Spin Transport in a Quantum Hall Insulator
    Zagitova, Azaliya Azatovna
    Zhuravlev, Andrey Sergeevich
    Kulik, Leonid Viktorovich
    Umansky, Vladimir
    APPLIED SCIENCES-BASEL, 2021, 11 (17):
12345