OBSERVATION OF RANDOM-TELEGRAPH NOISE IN RESONANT-TUNNELING DIODES

被引：19

作者：

NG, SH ^{[1
]}

SURYA, C ^{[1
]}

BROWN, ER ^{[1
]}

MAKI, PA ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of random-telegraph noise in GaAs/Al0.4Ga0.6As resonant tunneling diodes. Measurements made on our devices from 57 to 70 K revealed discrete switching events with step heights ranging from 6 to 20 muV. Our studies indicated that the 20-muV switching sequences correspond to two-state thermally activated processes involving a single trap. At a bias of -0.4 V, the capture and emission activation energies of this trap are 81 and 51 meV, respectively, implying that the trap is located in the barrier. Our results suggest that the noise arises from transmission coefficient fluctuations due to hopping conduction of carriers through the barrier.

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页码：2262 / 2264

页数：3

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