MEASUREMENTS OF THE CRITICAL RESOLVED SHEAR-STRESS FOR INDIUM-DOPED AND UNDOPED GAAS SINGLE-CRYSTALS

被引：43

作者：

TABACHE, MG ^{[1
]}

BOURRET, ED ^{[1
]}

ELLIOT, AG ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,DIV OPTOELECTR,SAN JOSE,CA 95131

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.97144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：289 / 291

页数：3

共 18 条

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