ELECTRONIC TRANSPORT-PROPERTIES OF TANTALUM DISILICIDE THIN-FILMS

被引：31

作者：

HUANG, MT ^{[1
]}

MARTIN, TL ^{[1
]}

MALHOTRA, V ^{[1
]}

MAHAN, JE ^{[1
]}

机构：

[1] COLORADO STATE UNIV,CONDENSED MAT SCI LAB,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.583113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：836 / 845

页数：10

共 48 条

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IRENE, EA ;

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SEGMULLER, AP ;

TIERNEY, E .

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[2]

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[3]

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[4]

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[5]

BUTLER WH, 1981, TREATISE MATERIALS S, V21, P165

[6] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].

CHOW, TP ;

STECKL, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497

[7]

CRACKNELL AP, 1973, FERMI SURFACE, pCH5

[8]

DHEURLE FM, 1982, VLSI SCI TECHNOLOGY, P194

[9] NMOS SILICIDE POLYSILICON GATES BY LIFT-OFF REACTIVE SPUTTER ETCHING [J].

FRASER, DB ;

KINSBRON, E ;

VRATNY, F ;

JOHNSTON, RL .

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[10]

GOLDSCHMIDT HJ, 1967, INTERSTITIAL ALLOYS, P306

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