ANTIMONY-DOPED TIN OXIDE-FILMS DEPOSITED BY THE OXIDATION OF TETRAMETHYLTIN AND TRIMETHYLANTIMONY

被引：27
作者：
CHOW, TP
GHEZZO, M
BALIGA, BJ
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 05期
关键词：
D O I：
10.1149/1.2124012
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1040 / 1045
页数：6
相关论文
共 20 条
[1]   CHEMICAL COMPOSITION AND ELECTRICAL PROPERTIES OF TIN OXIDE-FILMS PREPARED BY VAPOR-DEPOSITION [J].
ABOAF, JA ;
MARCOTTE, VC ;
CHOU, NJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) :701-702
[2]  
AITCHISON RE, 1954, AUSTRALIAN J APPL SC, V5, P10
[3]   PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN [J].
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :941-944
[4]   ELECTROCHEMICAL PATTERNING OF TIN OXIDE-FILMS [J].
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1059-1060
[5]   TRANSPARENT METAL-OXIDE ELECTRODE CID IMAGER [J].
BROWN, DM ;
GHEZZO, M ;
GARFINKEL, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (02) :196-200
[6]   MECHANISM OF CVD THIN-FILM SNO2 FORMATION [J].
GHOSHTAGORE, RN .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) :110-117
[7]   TRANSPARENT CONDUCTING COATINGS [J].
HAACKE, G .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :73-93
[8]  
HOLLAND L, 1963, VACUUM DEPOSITION TH, P493
[9]   PREPARATION AND PROPERTIES OF ARSENIC-DOPED TIN OXIDE-FILMS [J].
HSU, YS ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1434-1435
[10]   THE EFFECT OF PHOSPHORUS DOPING ON TIN OXIDE-FILMS MADE BY THE OXIDATION OF PHOSPHINE AND TETRAMETHYLTIN .2. ELECTRICAL-PROPERTIES [J].
HSU, YS ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1595-1599
12