DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODES

被引：9

作者：

AYTAC, S

SCHLACHETZKI, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 11期

关键词：

D O I：

10.1016/0038-1101(82)90154-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1135 / &

共 10 条

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[2] SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM-PHOSPHIDE [J].

AYTAC, S ;

SCHLACHETZKI, A .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :57-&

[3] FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION [J].

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DUTT, BV ;

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ROCCASECCA, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (11) :924-926

[4]

CLAWSON AR, 1978, 592 NAV OC SYST CTR

[5] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

COWLEY, AM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3024-&

[6]

HILDEBRAND O, 1982, PHYS STAT SOL A, V72

[7]

HILIBRAND J, 1960, RCA REV, V21, P245

[8]

KUNDUKHOV RM, 1967, SOV PHYS SEMICOND+, V1, P765

[9] DIFFUSION PROFILES OF ZINC IN INDIUM-PHOSPHIDE [J].

TUCK, B ;

HOOPER, A .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) :1806-1821

[10]

YEH TH, 1973, ATOMIC DIFFUSION SEM, P209

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