SAMPLE PREPARATION FOR STM IMAGING OF SILICON AT ATMOSPHERIC-PRESSURE

被引：5

作者：

BUMGARNER, S

RUSSELL, PE

机构：

[1] Engineering Research Center for Advanced Electronic Materials Processing, North Carolina State University, Raleigh

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90461-R

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

In this research, scanning tunneling microscopy at atmospheric pressure under a flowing nitrogen ambient has been used to investigate the microscopic texture of the silicon wafer surface as a function of the cleaning procedure used. The nitrogen ambient is used to prevent contamination of the surface during observation. Most of the surfaces observed show a "pebbly" structure, indicating that the surface is rough on an atomic scale; however, the measured RMS roughness is seen to vary with the final HF etch used.

引用

页码：1433 / 1437

页数：5

共 23 条

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