SAMPLE PREPARATION FOR STM IMAGING OF SILICON AT ATMOSPHERIC-PRESSURE

被引:5
作者
BUMGARNER, S
RUSSELL, PE
机构
[1] Engineering Research Center for Advanced Electronic Materials Processing, North Carolina State University, Raleigh
关键词
D O I
10.1016/0304-3991(92)90461-R
中图分类号
TH742 [显微镜];
学科分类号
摘要
In this research, scanning tunneling microscopy at atmospheric pressure under a flowing nitrogen ambient has been used to investigate the microscopic texture of the silicon wafer surface as a function of the cleaning procedure used. The nitrogen ambient is used to prevent contamination of the surface during observation. Most of the surfaces observed show a "pebbly" structure, indicating that the surface is rough on an atomic scale; however, the measured RMS roughness is seen to vary with the final HF etch used.
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页码:1433 / 1437
页数:5
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