LASER ABLATION OF POLYMERS

[1] DIRECT ETCHING OF POLYMERIC MATERIALS USING A XECL LASER [J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 717 - 719

[2] METAL-FILM REMOVAL AND PATTERNING USING A XECL LASER [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1076 - 1078

[3] ANDREW JE, 1983, CLEO

[4] EXCIMER LASER ETCHING OF POLYIMIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 2036 - 2043

[5] BRANNON JH, 1983, COMMUNICATION

[6] BRANNON JH, Patent No. 4508749

[7] OPTICAL AND PHOTOCHEMICAL FACTORS WHICH INFLUENCE ETCHING OF POLYMERS BY ABLATIVE PHOTODECOMPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 913 - 917

[8] DANIELZIK B, UNPUB APPL PHYS LETT

[9] SPECTROSCOPIC STUDIES OF ARF LASER PHOTOABLATION OF PMMA [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (01): : 27 - 30

[10] SELF-DEVELOPING UV PHOTORESIST USING EXCIMER LASER EXPOSURE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7201 - 7204

[1] DIRECT ETCHING OF POLYMERIC MATERIALS USING A XECL LASER [J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 717 - 719

[2] METAL-FILM REMOVAL AND PATTERNING USING A XECL LASER [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1076 - 1078

[3] ANDREW JE, 1983, CLEO

[4] EXCIMER LASER ETCHING OF POLYIMIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 2036 - 2043

[5] BRANNON JH, 1983, COMMUNICATION

[6] BRANNON JH, Patent No. 4508749

[7] OPTICAL AND PHOTOCHEMICAL FACTORS WHICH INFLUENCE ETCHING OF POLYMERS BY ABLATIVE PHOTODECOMPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 913 - 917

[8] DANIELZIK B, UNPUB APPL PHYS LETT

[9] SPECTROSCOPIC STUDIES OF ARF LASER PHOTOABLATION OF PMMA [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (01): : 27 - 30

[10] SELF-DEVELOPING UV PHOTORESIST USING EXCIMER LASER EXPOSURE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7201 - 7204