HETEROSTRUCTURE INJECTION-LASERS

被引：60
作者：
PANISH, MB [1 ]
机构：
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源：
PROCEEDINGS OF THE IEEE | 1976年 / 64卷 / 10期
关键词：
D O I：
10.1109/PROC.1976.10367
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1512 / 1540
页数：29
相关论文
共 226 条
[1]   TIME DELAYS AND Q-SWITCHING IN HOMOSTRUCTURE AND HETEROSTRUCTURE INJECTION LASERS [J].
ADAMS, MJ ;
GRUNDORFER, S ;
THOMAS, B ;
DAVIES, CFL ;
MISTRY, D .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :328-337
[2]   GAAS-GAALAS DISTRIBUTED-FEEDBACK DIODE LASERS WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].
AIKI, K ;
NAKAMURA, M ;
UMEDA, J ;
YARIV, A ;
KATZIR, A ;
YEN, HW .
APPLIED PHYSICS LETTERS, 1975, 27 (03) :145-146
[3]  
ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573
[4]  
ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V5, P875
[5]  
ALFEROV ZI, 1967, FIZ TVERD TELA+, V9, P208
[6]  
ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843
[7]  
ALFEROV ZI, 1967, SOV PHYS SEMICOND+, V1, P358
[8]  
ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1234
[9]  
ALFEROV ZI, 1963, Patent No. 1032155
[10]  
ALFEROV ZI, 1968, 9 P INT C PHYS SEM, P504
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