EFFECT OF SAMPLE DOPING LEVEL DURING ETCHING OF SILICON BY FLUORINE-ATOMS

被引：39
|
作者：
YARMOFF, JA [1 ]
MCFEELY, FR [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.38.2057
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2057 / 2062
页数：6
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