EFFECT OF SAMPLE DOPING LEVEL DURING ETCHING OF SILICON BY FLUORINE-ATOMS

被引：39
|
作者：
YARMOFF, JA [1 ]
MCFEELY, FR [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.38.2057
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2057 / 2062
页数：6
相关论文
共 50 条
  • [21] Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
    G. G. Zegrya
    V. P. Ulin
    A. G. Zegrya
    N. V. Ulin
    Yu. M. Mikhailov
    Technical Physics, 2019, 64 : 1492 - 1500
  • [22] Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
    Zegrya, G. G.
    Ulin, V. P.
    Zegrya, A. G.
    Ulin, N. V.
    Mikhailov, Yu. M.
    TECHNICAL PHYSICS, 2019, 64 (10) : 1492 - 1500
  • [23] Silicon etching reaction by fluorine. Local chemical model of n-doping effects
    Kawauchi, Susumu
    Tachibana, Akitomo
    Yamabe, Tokio
    Journal of Physical Chemistry, 1991, 95 (16):
  • [24] SILICON ETCHING REACTION BY FLUORINE - LOCAL CHEMICAL-MODEL OF NORMAL-DOPING EFFECTS
    KAWAUCHI, S
    TACHIBANA, A
    YAMABE, T
    JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (16): : 6303 - 6308
  • [25] MIGRATION OF FLUORINE-ATOMS AND INFLUENCE ON SHALLOW P+N JUNCTION IN BF2+ IMPLANTED SILICON UNDER RTA
    ZHANG, TQ
    LIU, JL
    YANG, XY
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 519 - 522
  • [26] FUNCTIONAL ORGANIC PEROXIDES .14. THE EFFECT OF FLUORINE-ATOMS AND FLUORINE-CONTAINING SUBSTITUENTS IN BENZALDEHYDE ON THE REACTION COURSE WITH HYDROGEN-PEROXIDE
    RAKHIMOV, AI
    CHAPURKIN, VV
    YAGUPOLSKII, LM
    KONDRATENKO, NV
    ZHURNAL ORGANICHESKOI KHIMII, 1980, 16 (07): : 1479 - 1483
  • [27] Influence of metallic catalyst and doping level on the metal assisted chemical etching of silicon
    Backes, A.
    Bittner, A.
    Leitgeb, M.
    Schmid, U.
    SCRIPTA MATERIALIA, 2016, 114 : 27 - 30
  • [28] Effects of the doping level in the production of silicon nanowalls by metal assisted chemical etching
    Aca-Lopez, Viridiana
    Quiroga-Gonzalez, Enrique
    Gomez-Barojas, Estela
    Swiatowska, Jolanta
    Luna-Lopez, J. Alberto
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 118 (118)
  • [29] Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
    G. G. Zegrya
    V. P. Ulin
    A. G. Zegrya
    N. V. Ulin
    V. M. Frayman
    Yu. M. Mikhailov
    Technical Physics, 2021, 66 : 367 - 367
  • [30] EFFECT OF OXYGEN ON FLUORINE-BASED REMOTE PLASMA-ETCHING OF SILICON AND SILICON DIOXIDE
    LOEWENSTEIN, LM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1984 - 1988
12345