EFFECT OF SAMPLE DOPING LEVEL DURING ETCHING OF SILICON BY FLUORINE-ATOMS

被引：39

作者：

YARMOFF, JA ^{[1
]}

MCFEELY, FR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.38.2057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2057 / 2062

页数：6

共 50 条

[1] THE EFFECT OF FLUORINE-ATOMS ON SILICON AND FLUOROCARBON ETCHING IN REACTIVE ION-BEAM ETCHING
CHEEKS, TL
RUOFF, AL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1917 - 1920
[2] TEMPERATURE-DEPENDENCE OF SILICON ETCHING RATE BY FLUORINE-ATOMS
BABANOV, Y
SVETOVOY, V
ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 355 - 358
[3] INTERACTIONS OF HYPERTHERMAL FLUORINE-ATOMS WITH SILICON - SCATTERING DYNAMICS AND ETCHING
MINTON, TK
MOORE, TA
GIAPIS, KP
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 208 : 159 - PHYS
[4] MECHANISM OF ION-ASSISTED ETCHING OF SILICON BY FLUORINE-ATOMS
YARMOFF, JA
MCFEELY, FR
SURFACE SCIENCE, 1987, 184 (03) : 389 - 400
[5] THE CABRERA-MOTT MECHANISM FOR SILICON ETCHING BY FLUORINE-ATOMS
BABANOV, Y
PROKAZNIKOV, A
SVETOVOY, V
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 : SB197 - SB198
[6] THE REACTION OF FLUORINE-ATOMS WITH SILICON
FLAMM, DL
DONNELLY, VM
MUCHA, JA
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639
[7] INFLUENCE OF THE SURFACE ELECTRON PROCESSES ON THE KINETICS OF SILICON ETCHING BY FLUORINE-ATOMS
BABANOV, YE
PROKAZNIKOV, AV
SVETOVOY, VB
VACUUM, 1990, 41 (4-6) : 902 - 905
[8] DEPENDENCE OF THE RATE OF ETCHING OF SILICON WITH FLUORINE-ATOMS ON ADSORPTION CHARACTERISTICS OF THE SURFACE
BABANOV, YE
PROKAZNIKOV, AV
SVETOVOI, VB
HIGH ENERGY CHEMISTRY, 1989, 23 (06) : 426 - 430
[9] THE SUBSTITUTION OF FLUORINE-ATOMS DURING ELECTROPHILIC METHYLATION OF OCTAFLUORONAPHTHALENE
DOBRONRAVOV, PN
SHTEINGARTS, VD
ZHURNAL ORGANICHESKOI KHIMII, 1981, 17 (10): : 2245 - 2246
[10] Inelastic and reactive scattering during etching of silicon with hyperthermal fluorine atoms
Minton, TK
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1996, 212 : 219 - PHYS

← 1 2 3 4 5 →