QUADRATIC ELECTRO-OPTIC (KERR) EFFECTS IN ZINCBLEND-TYPE SEMICONDUCTORS - KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGN

被引：8

作者：

ADACHI, S

OE, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 05期

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D O I：

10.1063/1.334105

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：1499 / 1504

页数：6

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