QUADRATIC ELECTRO-OPTIC (KERR) EFFECTS IN ZINCBLEND-TYPE SEMICONDUCTORS - KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGN

被引：8
作者：
ADACHI, S
OE, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 05期
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D O I：
10.1063/1.334105
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：1499 / 1504
页数：6
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