共 50 条
- [1] THERMALLY STIMULATED CAPACITOR DISCHARGE METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 378 - &
- [2] DETERMINATION OF TRAP PARAMETERS FROM THERMALLY STIMULATED CAPACITOR-DISCHARGE CURVES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (12): : 1486 - &
- [3] DETERMINATION OF TRAP PARAMETERS BY A THERMALLY STIMULATED CAPACITOR DISCHARGE METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (01): : 7 - &
- [4] INFLUENCE OF AN ADDITIONAL CAPACITOR ON A THERMALLY STIMULATED CAPACITOR DISCHARGE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1130 - &
- [5] PROBLEM OF A THERMALLY STIMULATED DISCHARGE OF A CAPACITOR WITH AN ADDITIONAL CAPACITANCE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 317 - 318
- [6] Comparison between thermally stimulated discharge method and photo-stimulated discharge method for measuring space charge traps energy Gaodianya Jishu/High Voltage Engineering, 2013, 39 (08): : 1845 - 1851
- [7] ANALYSIS OF THERMALLY STIMULATED CAPACITOR-DISCHARGE METHOD FOR CHARACTERIZING LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS PHYSICAL REVIEW B, 1974, 10 (10): : 4340 - 4350
- [8] ANALYSIS OF THERMALLY STIMULATED CAPACITOR DISCHARGE (TSCD) METHOD FOR CHARACTERIZING LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 213 - 213
- [9] DIFFERENTIAL METHOD FOR MEASURING THERMALLY STIMULATED CAPACITANCE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (09): : 1385 - 1385
- [10] THERMALLY STIMULATED DISCHARGE OF A METAL-INSULATOR-SEMICONDUCTOR CAPACITOR IN DIFFERENTIAL REGIME SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (04): : 469 - 470