ANALYTICAL MODELS OF GAAS-FETS

被引：24

作者：

SHUR, MS

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 01期

关键词：

D O I：

10.1109/T-ED.1985.21912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：70 / 72

页数：3

共 17 条

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CARNEZ, B ;

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SALMER, G ;

CONSTANT, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2158-2160

[2] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS [J].

CARNEZ, B ;

CAPPY, A ;

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CONSTANT, E ;

SALMER, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :784-790

[3] TRANSCONDUCTANCE COMPRESSION IN SUBMICROMETER GAAS-MESFETS [J].

CHEN, CL ;

WISE, KD .

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[4]

CHEN TH, 1983, P IEEE BIENNIAL C HI

[5] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS [J].

CURTICE, WR .

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[6]

ENGLEMANN RWH, 1977, IEEE T ELECTRON DEVI, V24, P1288

[7] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].

GREBENE, AB ;

GHANDHI, SK .

SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+

[8] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J].

HOWER, PL ;

BECHTEL, NG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :213-220

[9]

MORKOC H, 1983, MOL BEAM EPITAXY HET

[10]

Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

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