NUCLEATION EFFECTS DURING MBE GROWTH OF SN-DOPED GAAS

被引：41
作者：
HARRIS, JJ
JOYCE, BA
GOWERS, JP
NEAVE, JH
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 28卷 / 01期
关键词：
D O I：
10.1007/BF00617784
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：63 / 71
页数：9
相关论文
共 22 条
[1]   INFLUENCE OF GROWTH-CONDITIONS ON TIN INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ALEXANDRE, F ;
RAISIN, C ;
ABDALLA, MI ;
BRENAC, A ;
MASSON, JM .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4296-4304
[2]  
AMBRIDGE T, 1975, I PHYS C SER, V24, P320
[3]   ADSORPTION OF ZN ON GAAS [J].
ARTHUR, JR .
SURFACE SCIENCE, 1973, 38 (02) :394-412
[4]   NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J].
BARNES, PA ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :651-653
[5]   DESORPTION-KINETICS OF CONDENSED PHASES - 2-DIMENSIONAL PHASES OF SILVER ON GE(111) [J].
BERTUCCI, M ;
LELAY, G ;
MANNEVILLE, M ;
KERN, R .
SURFACE SCIENCE, 1979, 85 (02) :471-492
[6]   IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735
[7]  
Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304
[8]  
FARROW RFC, 1980, 8TH INT VAC C CANN F
[9]  
FOXON CT, COMMUNICATION
[10]  
Hagg G., 1935, PHILOS MAG, V20, P913
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