TEMPERATURE LIMITS ON INFRARED DETECTIVITIES OF INAS/INXGA1-XSB SUPERLATTICES AND BULK HGXCD1-XTE

被引:33
作者
YOUNG, PM
GREIN, CH
EHRENREICH, H
MILES, RH
机构
[1] UNIV ILLINOIS,DEPT PHYS MC273,CHICAGO,IL 60607
[2] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138
[3] HUGHES RES LABS,MALIBU,CA 90265
关键词
D O I
10.1063/1.354348
中图分类号
O59 [应用物理学];
学科分类号
摘要
Detailed theoretical calculations of Auger and radiative recombination rates for an optimized InAs/InxGa1-xSb superlattice (SL) and bulk HgxCd1-xTe (MCT) show that 300 K background limited operation for a 60-degrees field of view can be theoretically achieved up to 130 K for the 11 mum SL and up to 185 K for 5 mum MCT. The SL structure is theoretically superior to MCT for 11 mum operation. The converse is true at 5 mum.
引用
收藏
页码:4774 / 4776
页数:3
相关论文
共 6 条
[1]  
CASSELMAN TN, 1980, J APPL PHYS, V52, P848
[2]   TYPE-II SUPERLATTICES FOR INFRARED DETECTORS AND DEVICES [J].
CHOW, DH ;
MILES, RH ;
SCHULMAN, JN ;
COLLINS, DA ;
MCGILL, TC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) :C47-C51
[3]   MINORITY-CARRIER LIFETIMES IN IDEAL INGASB/INAS SUPERLATTICES [J].
GREIN, CH ;
YOUNG, PM ;
EHRENREICH, H .
APPLIED PHYSICS LETTERS, 1992, 61 (24) :2905-2907
[4]  
KINCH MA, 1974, INFRARED PHYS, V15, P111
[5]   LONG-WAVELENGTH INFRARED DETECTORS BASED ON STRAINED INAS-GA1-XINXSB TYPE-II SUPERLATTICES [J].
MAILHIOT, C ;
SMITH, DL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :445-449
[6]   ELECTRON MOBILITY IN HG1-X CDX TE [J].
SCOTT, W .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1055-+