3.3W CW DIFFRACTION LIMITED BROAD AREA SEMICONDUCTOR AMPLIFIER

被引：35

作者：

GOLDBERG, L ^{[1
]}

HALL, DC ^{[1
]}

MEHUYS, D ^{[1
]}

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 12期

关键词：

OPTICAL AMPLIFIERS; SEMICONDUCTOR DEVICES;

D O I：

10.1049/el:19920684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 600-mu-m wide GaAlAs travelling wave amplifier operating at 860 nm generated 3.3 W under CW saturated operation. The far field emission pattern was diffraction limited with a 0.08-degrees angular width.

引用

页码：1082 / 1084

页数：3

共 10 条

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