TRIMETHYLGALLIUM REACTIONS ON AS-STABILIZED AND GA-STABILIZED GAAS(100) SURFACES

被引：3

作者：

SASAKI, M ^{[1
]}

KAWAKYU, Y ^{[1
]}

ISHIKAWA, H ^{[1
]}

MASHITA, M ^{[1
]}

机构：

[1] TOSHIBA CO LTD, CTR RES & DEV, SAIWAI KU, KAWASAKI 210, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9B期

关键词：

TRIMETHYLGALLIUM; MASS SPECTROMETRY; GAAS; SURFACE REACTION; ATOMIC LAYER EPITAXY;

D O I：

10.1143/JJAP.31.L1313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compared the trimethylgallium (TMG) reaction on an As-stabilized surface of GaAs with that on a Ga-stabilized surface using a quadrupole mass spectrometer equipped with a cold aperture. It was found that, although TMG thermally decomposed on both the As-stabilized and Ga-stabilized surfaces, Ga-containing decomposition products did not desorb from the As-rich surface. A new growth mechanism for GaAs atomic layer epitaxy, related to this desorption difference, is also discussed.

引用

页码：L1313 / L1315

页数：3

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