SILICON-CARBON COMPOSITE-MATERIALS

[1] AN EXPERIMENTAL AND THEORETICAL-STUDY OF TEMPERATURE DISTRIBUTION IN SAPPHIRE CRYSTALS GROWN FROM THE MELT BY STEPANOVS METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) : 62 - 68

[2] BRANTOV S, 1985, IAN SSSR NEORG MATER, V21, P2032

[3] BRANTOV SK, 1986, ROST KRISTALLOV, P176

[4] BRANTOV SK, 1985, POVERKHNOST FIZIKA K, P139

[5] AUGER ANALYSIS OF SILICON THIN-FILMS DEPOSITED ON CARBON AT HIGH-TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3402 - 3407

[6] PREPARATION AND PROPERTIES OF CVD-SILICON TUBES AND BOATS FOR SEMICONDUCTOR-DEVICE TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) : 1112 - 1115

[7] FEDERER JI, 1982, WASTE HEAT RECOVERY

[8] SELF-DIFFUSION IN SILICON CARBIDE [J]. PHYSICAL REVIEW, 1966, 143 (02): : 623 - +

[9] TARABANOV AS, 1977, SILITSIROVANNYI GRAF, P173

[1] AN EXPERIMENTAL AND THEORETICAL-STUDY OF TEMPERATURE DISTRIBUTION IN SAPPHIRE CRYSTALS GROWN FROM THE MELT BY STEPANOVS METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) : 62 - 68

[2] BRANTOV S, 1985, IAN SSSR NEORG MATER, V21, P2032

[3] BRANTOV SK, 1986, ROST KRISTALLOV, P176

[4] BRANTOV SK, 1985, POVERKHNOST FIZIKA K, P139

[5] AUGER ANALYSIS OF SILICON THIN-FILMS DEPOSITED ON CARBON AT HIGH-TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3402 - 3407

[6] PREPARATION AND PROPERTIES OF CVD-SILICON TUBES AND BOATS FOR SEMICONDUCTOR-DEVICE TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) : 1112 - 1115

[7] FEDERER JI, 1982, WASTE HEAT RECOVERY

[8] SELF-DIFFUSION IN SILICON CARBIDE [J]. PHYSICAL REVIEW, 1966, 143 (02): : 623 - +

[9] TARABANOV AS, 1977, SILITSIROVANNYI GRAF, P173