PHOTOELECTRIC PROPERTIES OF CDXHG1-XTE AT HIGH-TEMPERATURES

被引：0

作者：

VDOVKINA, EE

BARYSHEV, NS

SHCHETININ, MP

CHERKASOV, AP

AVERYANOV, IS

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 01期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：109 / 110

页数：2

共 8 条

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[2]

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[3]

BARYSHEV NS, 1972, THESIS LENINGRAD

[4] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

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[5]

Jervis M. H., 1970, Mullard Technical Communications, V11, P182

[6] RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE [J].

KINCH, MA ;

BRAU, MJ ;

SIMMONS, A .

[7] AUGER RECOMBINATION IN HG1-XCDXTE [J].

PETERSEN, PE .

[8]

VDOVKINA EE, 1973, IZV AKAD NAUK SSSR N, V9, P130